Breakdown characteristics of TiN/HfxZr1-xO2/Al2O3/Ge gate stacks

Document Type

Conference Proceeding

Publication Date

1-1-2017

Abstract

This work evaluates the time dependent dielectric breakdown (TDDB) characteristics of TiN/HfxZr1-xO2/Al2O3/Ge gate stacks by changing the Zr content and with slot-plane antenna plasma oxidation (SPAO), performed immediately after the ALD deposition of the high-k layers. It was observed that the equivalent oxide thickness (EOT) decreases with Zr addition in HfO2 with up to 75% of Zr incorporation. With 100% Zr incorporation EOT increased significantly. This is possibly due to the formation of low-k interfacial GeO2 at the interface for 100% Zr whereas for other samples have comparatively thinner GeOx interfacial layers. Weibull plots shows that charge to breakdown (Qbd) increased with the percentage of Zr. However, the breakdown acceleration factor decreased with Zr percentage up to 75% and increased rapidly for 100% Zr content. It is, therefore, believed that GeOi increases the TDDB degradation.

Identifier

85044161706 (Scopus)

ISBN

[9781623324704, 9781607688181]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/08001.0071ecst

e-ISSN

19385862

ISSN

19386737

First Page

71

Last Page

77

Issue

1

Volume

80

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