Frequency and area dependence of High-K/Ge MOS capacitors

Document Type

Conference Proceeding

Publication Date

1-1-2017

Abstract

This paper investigates the capacitance-voltage (C-V) measurements of Ge/A12O3/ZrO2/TiN MOS capacitors at different frequencies for square devices with different side lengths (10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 100μm). The results show that the series resistance corrected capacitance (Cc) for accumulation region is dependent on frequency, devices substrate and area. Cc increases at a faster pace when a lower frequency (lKHz) is used than at a higher frequency (1MHz). Substantial decrease of Cc per unit area is reported in Ge/High-K in comparison to Si/High-K devices when device area is increased. This decrease is attributed to the large non-uniform interface defect density and high leakage current associated with Ge.

Identifier

85030539067 (Scopus)

ISBN

[9781623324605, 9781607688174]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/07711.1977ecst

e-ISSN

19385862

ISSN

19386737

First Page

1977

Last Page

1984

Issue

11

Volume

77

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