High efficiency green/yellow and red InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

Authors

M. R. Philip, Newark College of Engineering
D. D. Choudhary, Newark College of Engineering
M. Djavid, Newark College of Engineering
K. Q. Le, Hoa Sen University
J. Piao, EPITAXIAL LABORATORY INC
H. P.T. Nguyen, Newark College of Engineering

Document Type

Article

Publication Date

6-1-2017

Abstract

We report on the achievement of high efficiency green, yellow, and red InGaN/AlGaN dot-in-a-wire nanowire light-emitting diodes grown on Si(111) by molecular beam epitaxy. The peak emission wavelengths were altered by varying the growth conditions, including the substrate temperature, and In/Ga flux ratio. The devices demonstrate relatively high (>40%) internal quantum efficiency at room temperature, relative to that measured at 5 K. Moreover, negligible blue-shift in peak emission spectrum associated with no efficiency droop was measured when injection current was driven up to 556 A/cm².

Identifier

85038613591 (Scopus)

Publication Title

Journal of Science Advanced Materials and Devices

External Full Text Location

https://doi.org/10.1016/j.jsamd.2017.05.009

e-ISSN

24682179

ISSN

24682284

First Page

150

Last Page

155

Issue

2

Volume

2

Grant

210124

Fund Ref

National Science Foundation

Recommended Citation

Philip, M. R.; Choudhary, D. D.; Djavid, M.; Le, K. Q.; Piao, J.; and Nguyen, H. P.T., "High efficiency green/yellow and red InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy" (2017). Faculty Publications. 9555.
https://digitalcommons.njit.edu/fac_pubs/9555