Logic gates with ion transistors

Document Type

Article

Publication Date

9-30-2017

Abstract

Electronic logic gates are the basic building blocks of every computing and micro-controlling system and typically require the integration of several switching elements. Ion circuits are much slower than their electronic counterpart; yet combining chemistry or bio chemistry with digital aspects is an intriguing concept. Here we demonstrate ion-XOR and ion–OR gates with two electrochemical cells without pre-ion separation. The cells were modified to include a third, permeable and conductive mid electrode (the gate), which was placed between the anode and cathode. Key to our demonstration is the use of small biasing gate power with respect to the circuit's power output. The effect is reversible and a demonstration of self-powered ion circuitry.

Identifier

85025655327 (Scopus)

Publication Title

Thin Solid Films

External Full Text Location

https://doi.org/10.1016/j.tsf.2017.07.044

ISSN

00406090

First Page

138

Last Page

143

Volume

638

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