Effects of optical absorption in deep ultraviolet nanowire light-emitting diodes
Document Type
Article
Publication Date
2-1-2018
Abstract
We report our study on the effect of optical absorption in nanowire ultraviolet light-emitting diodes (LEDs) using three-dimensional finite difference time domain simulation. Utilizing nanowire structures can avoid the emission of guided modes inside LED structure and redirect the trapped light into radiated modes. The optical loss due to material absorption can be decreased by reducing light propagation path inside the LED structure, and consequently enhance the light extraction efficiency (LEE). Nanowire form factors including size, and density play important roles on the LEE of ultraviolet (UV) nanowire LEDs. In this paper, the nanowire spacing and diameter are considered in simulation to reach maximum LEE. Our results show an unprecedentedly high LEE of ∼34% can be achieved for deep UV emission at 240 nm. Moreover, UV nanowire LEDs with random structure can exhibit LEE of ∼19% which is comparable or higher than that of high efficiency UV thin-film LEDs.
Identifier
85034966247 (Scopus)
Publication Title
Photonics and Nanostructures Fundamentals and Applications
External Full Text Location
https://doi.org/10.1016/j.photonics.2017.10.003
e-ISSN
15694429
ISSN
15694410
First Page
106
Last Page
110
Volume
28
Grant
EEC-1560131
Fund Ref
National Science Foundation
Recommended Citation
Djavid, M.; Choudhary, D. D.; Rajan Philip, M.; Bui, T. H.Q.; Akinnuoye, O.; Pham, T. T.; and Nguyen, H. P.T., "Effects of optical absorption in deep ultraviolet nanowire light-emitting diodes" (2018). Faculty Publications. 8870.
https://digitalcommons.njit.edu/fac_pubs/8870
