Ambient temperature and layout impact on self-heating characterization in FinFET devices

Document Type

Conference Proceeding

Publication Date

5-25-2018

Abstract

Self-Heating effects are going to be of increasing significance in future nodes. Understanding self-heating measurement results and its accuracy is of vital importance. In this paper we show for the first time through measurement that the ambient temperature can affect self-heating measurement by up to 70%. Through a series of measurements at different temperatures and dissipated power, we show that the Si fin has a more dominant effect in heat transport and its varying thermal conductivity should be taken into account.

Identifier

85046952982 (Scopus)

ISBN

[9781538654798]

Publication Title

IEEE International Reliability Physics Symposium Proceedings

External Full Text Location

https://doi.org/10.1109/IRPS.2018.8353640

ISSN

15417026

First Page

6E.21

Last Page

6E.25

Volume

2018-March

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