Self-heating effects on hot carrier degradation and its impact on ring-oscillator reliability
Document Type
Conference Proceeding
Publication Date
10-1-2018
Abstract
This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.
Identifier
85067595318 (Scopus)
ISBN
[9781538660393]
Publication Title
IEEE International Integrated Reliability Workshop Final Report
External Full Text Location
https://doi.org/10.1109/IIRW.2018.8727093
e-ISSN
23748036
ISSN
19308841
Recommended Citation
Paliwoda, P.; Chbili, Z.; Kerber, A.; Nigam, T.; Singh, D.; Nagahiro, K.; Manik, P. P.; Cimino, S.; and Misra, D., "Self-heating effects on hot carrier degradation and its impact on ring-oscillator reliability" (2018). Faculty Publications. 8355.
https://digitalcommons.njit.edu/fac_pubs/8355
