Experimental Comparison of HfO2/X-Based ReRAM Devices Switching Properties by the MIM Capacitance

Document Type

Article

Publication Date

1-1-2024

Abstract

The objective of this work is to present a comparison of the switching properties in Resistive Random-Access-Memory between two different switching layer devices through the capacitance measurements. The analysis was carried out in two devices with different insulating layers, one composed of H-plasma-treated HfO2 and another with a stoichiometric HfO2. The device with a higher quantity of oxygen vacancy-related defects in the insulator (HfO2 w/trt) presents a wider spread of the capacitance with the application of a range of varying pulse widths. An increase in the capacitance from 3.904 to 3.917 pF/μ m2 was observed for the same device when it was subjected to a 144 μ s pulse width, demonstrating a conductance quantization required for the application in in-memory computing systems. Also, the dielectric constant modulates due to the migration of oxygen atoms inside the device's insulator.

Identifier

85208121651 (Scopus)

Publication Title

IEEE Journal of the Electron Devices Society

External Full Text Location

https://doi.org/10.1109/JEDS.2024.3485622

e-ISSN

21686734

Grant

2023/14970-3

Fund Ref

Fundação de Amparo à Pesquisa do Estado de São Paulo

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