Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: A promising candidate for next generation micro displays
Document Type
Article
Publication Date
8-1-2019
Abstract
We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.
Identifier
85070965831 (Scopus)
Publication Title
Micromachines
External Full Text Location
https://doi.org/10.3390/mi10080492
e-ISSN
2072666X
Issue
8
Volume
10
Grant
1852375
Fund Ref
National Science Foundation
Recommended Citation
Bui, Ha Quoc Thang; Velpula, Ravi Teja; Jain, Barsha; Aref, Omar Hamed; Nguyen, Hoang Duy; Lenka, Trupti Ranjan; and Nguyen, Hieu Pham Trung, "Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: A promising candidate for next generation micro displays" (2019). Faculty Publications. 7431.
https://digitalcommons.njit.edu/fac_pubs/7431
