Phosphor-free III-nitride red micro-light emitting diodes for display applications

Document Type

Conference Proceeding

Publication Date

1-1-2021

Abstract

In this study, we report highly stable phosphor-free InGaN/AlGaN spontaneously formed core-shell nanowire red micro-light emitting diodes (μLEDs) with 30 × 30 μm2 mesa area directly grown on Si (111) substrates using molecular beam epitaxy.

Identifier

85120038295 (Scopus)

Publication Title

Optics Infobase Conference Papers

e-ISSN

21622701

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