Effect of HfO2 passivation layer on light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes

Document Type

Conference Proceeding

Publication Date

1-1-2021

Abstract

One of the probable reasons behind the limitation of light extraction efficiency (LEE) in III-nitride nanowire (NW) deep ultraviolet (UV) light-emitting diodes (LEDs) is the presence of the high surface density states that significantly contribute to the non-radiative recombination near the surface. Herein, we investigate the LEE of a single AlInN NW UV LED in the entire UV wavelength regime using finite-difference time-domain simulations. It is found that these LEDs favor transverse-magnetic (TM) polarized LEE over transverse-electric (TE) polarized emission. Further, we examine the role of the HfO2 surface passivation layer in the improvement of LEE of AlInN NW LED at ~282 nm wavelength. Our results show that the TM-polarized LEE of such LED without any passivation is only ~25.2%, whereas the maximum recorded LEE is ~40.6% with the utilization of 40 nm HfO2 passivation layer. This study provides a promising approach for enhancing the LEE of NW UV LEDs.

Identifier

85107230420 (Scopus)

ISBN

[9781607689164]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/10203.0035ecst

e-ISSN

19385862

ISSN

19386737

First Page

35

Last Page

42

Issue

3

Volume

102

Grant

1944312

Fund Ref

National Science Foundation

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