Variation in the interface strength of silicon with surface engineered Ti3C2MXenes

Document Type

Article

Publication Date

3-7-2021

Abstract

Current advancements in battery technologies require electrodes to combine high-performance active materials such as Silicon (Si) with two-dimensional materials such as transition metal carbides (MXenes) for prolonged cycle stability and enhanced electrochemical performance. More so, it is the interface between these materials, which is the nexus for their applicatory success. Herein, the interface strength variations between amorphous Si and Ti3C2TxMXenes are determined as the MXene surface functional groups (Tx) are changed using first principles calculations. Si is interfaced with three Ti3C2MXene substrates having surface −OH, −OH and −O mixed, and −F functional groups. Density functional theory (DFT) results reveal that completely hydroxylated Ti3C2has the highest interface strength of 0.6 J m−2with amorphous Si. This interface strength value drops as the proportion of surface −O and −F groups increases. Additional analysis of electron redistribution and charge separation across the interface is provided for a complete understanding of underlying physico-chemical factors affecting the surface chemistry and resultant interface strength values. The presented comprehensive analysis of the interface aims to develop sophisticated MXene based electrodes by their targeted surface engineering.

Identifier

85102426544 (Scopus)

Publication Title

Physical Chemistry Chemical Physics

External Full Text Location

https://doi.org/10.1039/d0cp06190e

ISSN

14639076

PubMed ID

33651068

First Page

5540

Last Page

5550

Issue

9

Volume

23

Grant

DMR180013

Fund Ref

National Science Foundation

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