Controlled carrier mean free path for the enhanced efficiency of III-nitride deep-ultraviolet light-emitting diodes
Document Type
Article
Publication Date
4-1-2021
Abstract
Electron overflow from the active region confines the AlGaNdeep-ultraviolet (UV) light-emitting diode (LED) performance. This paper proposes a novel approach to mitigate the electron leakage problem in AlGaN deep-UV LEDs using concave quantum barrier (QB) structures. The proposed QBs suppress the electron leakage by significantly reducing the electron mean free path that improves the electron capturing capability in the active region. Overall, such an engineered structure also enhances the hole injection into the active region, thereby enhancing the radiative recombination in the quantum wells. As a result, our study shows that the proposed structure exhibits an optical power of 9.16 m W at~284 nm wavelength, which is boosted by~40.5% compared to conventional AlGaNUV LED operating at 60 mA injection current.
Identifier
85105563586 (Scopus)
Publication Title
Applied Optics
External Full Text Location
https://doi.org/10.1364/AO.418603
e-ISSN
21553165
ISSN
1559128X
PubMed ID
33983204
First Page
3088
Last Page
3093
Issue
11
Volume
60
Grant
1944312
Fund Ref
National Science Foundation
Recommended Citation
Jain, Barsha; Velpula, Ravi Teja; Patel, Moulik; and Nguyen, Hieu Pham Trung, "Controlled carrier mean free path for the enhanced efficiency of III-nitride deep-ultraviolet light-emitting diodes" (2021). Faculty Publications. 4188.
https://digitalcommons.njit.edu/fac_pubs/4188
