ZnAl-LDH and B-impregnated polymeric semiconductor (g-C3N4) for solar light-driven photocatalysis to treat phenolic effluent
Document Type
Article
Publication Date
7-1-2021
Abstract
The structural transformation of graphitic carbon nitride (g-C3N4) has been done by means of Zinc Aluminium layered double hydroxide (ZnAl-LDH), and a non-metal, i.e. boron impregnation to enhance its visible light absorption. Optical and morphological study intimates that an altered band assembly formed due to the impregnation, resulting in a shorten bandgap in conjunction with the development of an irregular hexagonally interrelated morphology. In addition, the impregnated g-C3N4 (40% B-g-C3N4 and 30%ZnAl-LDH/g-C3N4) owns an expanded surface area of 14.3137, and 26.292 m2/g, which demonstrate 90.25, 86.31% degradation in phenol at 270 min illumination, with 700 mg/L of chemical oxidant concentration, and 5 L/h of flowrate, whereas under same conditions g-C3N4 impart 62.38% degradation. We hope this study will open a new dimensions for the sustainable use of solar energy for environmental applications.
Identifier
85103267739 (Scopus)
Publication Title
Sustainable Materials and Technologies
External Full Text Location
https://doi.org/10.1016/j.susmat.2021.e00266
e-ISSN
22149937
Volume
28
Recommended Citation
Tripathi, Alok and Hussain, Chaudhery Mustansar, "ZnAl-LDH and B-impregnated polymeric semiconductor (g-C3N4) for solar light-driven photocatalysis to treat phenolic effluent" (2021). Faculty Publications. 3985.
https://digitalcommons.njit.edu/fac_pubs/3985