Breakdown Characteristics Study of III-Nitride β-Ga2O3Nano-HEMT as a function of Field-Plate Length & AlN Nucleation Layer Thickness

Document Type

Conference Proceeding

Publication Date

1-1-2022

Abstract

Group III-nitride semiconductors such as (Al, Ga, In) N and their alloys have increasingly attracted the attention of worldwide researchers due to their unique material properties. AlGaN/GaN is the most widely proven material, allowing it to be employed in a number of nanoelectronics applications due to its significant high-power and high-frequency characteristics. High power density is achieved by AlGaN/GaN high electron mobility transistor (HEMT) with a significant critical breakdown field and the capacity to sustain a large channel current. However, one important consideration is that the AIGaN/GaN HEMT's breakdown voltage (BV) is significantly lower than the theoretical value. In this research work, the theoretical relationship between the BV of III-Nitride HEMT on β-Ga2O3 substrate, field-plate length, and AIN layer thickness has been investigated. The results show that the breakdown voltage of the proposed HEMT increases accordingly with AIN thickness, but it saturates gradually. Then, as the length of the field-plate increases, the breakdown voltage rises. As a result, the breakdown voltage of a device improves with the field-plate length and is limited by the AIN back-barrier layer thickness.

Identifier

85150417440 (Scopus)

ISBN

[9781665462426]

Publication Title

2022 IEEE Calcutta Conference Calcon 2022 Proceedings

External Full Text Location

https://doi.org/10.1109/CALCON56258.2022.10060173

First Page

30

Last Page

33

Grant

MTR/2021/000370

Fund Ref

Department of Science and Technology, Ministry of Science and Technology, India

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