Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3Substrate for Emerging Terahertz Applications
Document Type
Conference Proceeding
Publication Date
1-1-2022
Abstract
This article reports a novel recessed gate AlGaN/AlN/GaN Nano-HEMT with field-plate on the β-Ga2O3 substrate. The simulation results show that the leakage current is drastically decreased due to the reduced lattice mismatch of the GaN layer with the substrate. It exhibited an electric field of 1.4MV/s, breakdowns at 72V, a current gain-cut-off frequency of 1.12THz and unilateral power gain-maximum oscillation frequency of 1.132THz, and a JFOM of 72.072 THz-V. Therefore, with the help of β-Ga2O3 as a substrate, the proposed novel HEMT exhibited terahertz frequency characteristics and superior JFOM value. Our results will pave the way for future high-frequency devices on β-Ga2O3 substrates.
Identifier
85160518193 (Scopus)
ISBN
[9781665491853]
Publication Title
2022 IEEE International Conference on Emerging Electronics Icee 2022
External Full Text Location
https://doi.org/10.1109/ICEE56203.2022.10118010
Grant
MTR/2021/000370
Fund Ref
Department of Science and Technology, Ministry of Science and Technology, India
Recommended Citation
Rao, G. Purnachandra; Baruah, Nistha; Lenka, Trupti Ranjan; Singh, Rajan; Sadaf, Sharif Md; and Nguyen, Hieu Pham Trung, "Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3Substrate for Emerging Terahertz Applications" (2022). Faculty Publications. 3511.
https://digitalcommons.njit.edu/fac_pubs/3511
