The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga2O3Nano-HEMT

Document Type

Conference Proceeding

Publication Date

1-1-2022

Abstract

In this research article, the influence of AlGaN back-barrier on the device performance has been analyzed. The study has been conducted based on the effect on the breakdown characteristics and RF performance. The inclusion of back barrier helps to raise conduction band, which diminishes the leakage path below the buffer layer and also helps to contain the 2DEG in the narrow channel. Furthermore, the RF performance is improved by mitigating the conduction losses and short channel effects. The device having the features of Si3N4 passivation, recessed gate structure and the substrate used is β-Ga2O3. The enhancement in breakdown voltage, RF performance (fT & fmax) with the presence of AlGaN back barrier in proposed III-Nitride Nano-HEMT on the preferred β-Ga2O3 is observed in both the cases of with & without field-plate. So, the future of HEMT technology is promising with the ongoing improvements to fulfil operational needs.

Identifier

85148689987 (Scopus)

ISBN

[9781665472050]

Publication Title

Proceedings of 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter Edkcon 2022

External Full Text Location

https://doi.org/10.1109/EDKCON56221.2022.10032868

First Page

434

Last Page

439

Grant

MTR/2021/000370

Fund Ref

Department of Science and Technology, Ministry of Science and Technology, India

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