Study on the Quantum Efficiency Enhancement in AlInN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy
Document Type
Conference Proceeding
Publication Date
1-1-2022
Abstract
We report on the demonstration of electron blocking layer free AlInN nanowire light-emitting diodes (LEDs) operating in the 280-365 nm wavelength region. The molecular beam epitaxial grown AlInN nanowires have a relatively high internal quantum efficiency of > 52%. Moreover, we show that the light extraction efficiency of the nanowires could reach ~ 63% for hexagonal photonic crystal nanowire structures which is significantly higher compared to that of the random nanowire arrays. This study provides significant insights into the design and fabrication of a new type of high-performance AlInN nanowire ultraviolet light-emitters.
Identifier
85142665607 (Scopus)
ISBN
[9781665453400]
Publication Title
2022 Compound Semiconductor Week Csw 2022
External Full Text Location
https://doi.org/10.1109/CSW55288.2022.9930404
Recommended Citation
Velpula, Ravi Teja; Jain, Barsha; and Nguyen, Hieu P.T., "Study on the Quantum Efficiency Enhancement in AlInN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy" (2022). Faculty Publications. 3310.
https://digitalcommons.njit.edu/fac_pubs/3310
