Analytical modeling of I–V characteristics using 2D Poisson equations in AlN/β-Ga2O3 HEMT
Document Type
Article
Publication Date
7-1-2022
Abstract
In this paper, physics-based analytical models using two-dimensional (2D) Poisson equations for surface potential, channel potential, electric field, and drain current in AlN/β-Ga2O3 high electron mobility transistor (HEMT) is presented. The analytical expression of different quantities is achieved based on full depletion approximation of the AlN barrier layer and polarization charge induced unified two-dimensional electron gas (2DEG) charge density model. For the validation of the developed model, results are compared with 2D numerical simulation results, and a good consistency is found between the two. The drain current model is also validated with experimental results of a similar dimension device. The developed model can be a good reference for different β-Ga2O3-based HEMTs.
Identifier
85126614185 (Scopus)
Publication Title
Materials Science in Semiconductor Processing
External Full Text Location
https://doi.org/10.1016/j.mssp.2022.106627
ISSN
13698001
Volume
145
Grant
MTR/2021/000370
Fund Ref
Department of Science and Technology, Ministry of Science and Technology, India
Recommended Citation
Singh, R.; Lenka, T. R.; Panda, D. K.; Nguyen, H. P.T.; Boukortt, N. El I.; and Crupi, G., "Analytical modeling of I–V characteristics using 2D Poisson equations in AlN/β-Ga2O3 HEMT" (2022). Faculty Publications. 2852.
https://digitalcommons.njit.edu/fac_pubs/2852
