Nonvolatile memory based architectures using magnetoelectric FETs

Document Type

Syllabus

Publication Date

9-30-2022

Abstract

Of the numerous beyond complementary metal-oxide semiconductor (CMOS) devices investigated, the magnetoelectric field effect transistor (MEFET) has shown promise as a high-speed and low-power device in both logic and memory applications. We here discuss several memory bit-cell and array design options that utilize the nonvolatile features of the MEFET. With correct codesign of the device, cell, array levels, and sense FET, such designs are promising candidates for on-chip non-volatile RAM substitution.

Identifier

85148188320 (Scopus)

ISBN

[9781119869603, 9781119869610]

Publication Title

Advances in Semiconductor Technologies Selected Topics Beyond Conventional Cmos

First Page

79

Last Page

92

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