Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications

Authors

G. Purnachandra Rao, National Institute of Technology Silchar
Trupti Ranjan Lenka, National Institute of Technology Silchar
Rajan Singh, MLR Institute of Technology
Hieu Pham Trung Nguyen, Newark College of Engineering

Document Type

Article

Publication Date

11-1-2022

Abstract

In this work, a recessed gate AlGaN/AlN/GaN HEMT (high electron mobility transistor) on β-Ga2O3 substrate is proposed using a field-plate mechanism and compared with a recessed gate structure (recessed depth of 25 nm, 30 nm, and 35 nm) without field-plate. The device is optimized and analysed to obtain diminished leakage current (10⁻¹⁶A/mm), RON (1.27 Ω-mm), PFOM (power figure of merit) (4373 MW/cm³), breakdown voltage (108 V), and excellent DC characteristics using Atlas TCAD. It is observed that the obtained results are better than those reported in recent studies. These RON and PFOM demonstrate that the suggested device structure on the preferred β-Ga2O3 substrate is an excellent contender for future high-power nanoelectronics applications.

Identifier

85137747305 (Scopus)

Publication Title

Journal of the Korean Physical Society

External Full Text Location

https://doi.org/10.1007/s40042-022-00603-x

e-ISSN

19768524

ISSN

03744884

First Page

876

Last Page

884

Issue

9

Volume

81

Grant

MTR/2021/000370

Fund Ref

Department of Science and Technology, Ministry of Science and Technology, India

Recommended Citation

Rao, G. Purnachandra; Lenka, Trupti Ranjan; Singh, Rajan; and Nguyen, Hieu Pham Trung, "Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications" (2022). Faculty Publications. 2547.
https://digitalcommons.njit.edu/fac_pubs/2547