Simulation modelling of III-Nitride/β-Ga2O3 Nano-HEMT for microwave and millimetre wave applications

Document Type

Article

Publication Date

12-1-2022

Abstract

In this piece of work, a recessed gate field-plated AlGaN/AlN/GaN HEMT on β-Ga2O3 substrate is proposed and its performance characteristics are compared with HEMT structure employing a recessed gate (depth of 25, 30 and 35 nm) without field-plate. The device is simulated to obtain breakdown voltage, microwave frequency characteristics (fT, fmax) and JFOM using Atlas TCAD. The cut-off frequency and maximum frequency of oscillations are 420 and 720 GHz, respectively, which are excellent than those reported in recent studies. For 20 nm gate length, the suggested HEMT achieves the maximum JFOM of 45.3 THz-V. These fT, fmax and JFOM demonstrate that the proposed HEMT on β-Ga2O3 substrate is an excellent candidate for emerging microwave and millimetre wave applications.

Identifier

85138145193 (Scopus)

Publication Title

International Journal of RF and Microwave Computer Aided Engineering

External Full Text Location

https://doi.org/10.1002/mmce.23416

e-ISSN

1099047X

ISSN

10964290

Issue

12

Volume

32

Grant

MTR/2021/000370

Fund Ref

Department of Science and Technology, Ministry of Science and Technology, India

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