Characterization of Switching Properties in ReRAM Devices by the Capacitance of the MIM Structure

Document Type

Article

Publication Date

8-1-2024

Abstract

In this article, an analysis of the switching mechanism in Resistive Random-Access-Memory devices in relation to the capacitance variation of the Metal-Insulator-Metal structure is performed through experimental capacitance measurements. A variation in the capacitance was observed when a set of pulses with different widths and amplitudes was applied to the devices in the Multi-Level-Cell regime. The presence of multiple resistive states can also be observed with the changes in the dielectric constant of the material’s insulating layer. The migration of the defects inside dielectric is responsible for the devices exhibiting multiple capacitive reactance states, demonstrating the conductance quantization, required for the application in in-memory computing systems.

Identifier

85201834149 (Scopus)

Publication Title

Journal of Integrated Circuits and Systems

External Full Text Location

https://doi.org/10.29292/jics.v19i2.805

e-ISSN

18720234

ISSN

18071953

Issue

2

Volume

19

Grant

303938/2020-0

Fund Ref

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

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