Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation

Document Type

Article

Publication Date

1-1-2023

Abstract

A novel, white light-emitting diode structure with improved thermal characteristics is designed for providing efficient light which may be used especially in the underground mining environment. It describes a new nano hafnium oxide-silica doped silicone layer as LED encapsulation material that promises enhanced efficiency by 30.1% and reduced efficiency droop of 0.491%. The enhanced power and efficiency of the LED with HfO2/SiO2 doped bi-layer are attributed to the significant minimization of overflow of electrons which is fundamentally responsible for efficiency degradation through p-GaN region. In this article encapsulant material based on nano HfO2/SiO2 not only enhances light extraction but opens a broad new range of encapsulant engineering capabilities composites. Our designed LED is generated from a monolithic composition of blue and yellow spectrum which eventually creates the white light. This minimizes the problems related to multiple numbers of LEDs, green gap and phosphor color rendering.

Identifier

85143699198 (Scopus)

Publication Title

Optical and Quantum Electronics

External Full Text Location

https://doi.org/10.1007/s11082-022-04350-y

e-ISSN

1572817X

ISSN

03068919

Issue

1

Volume

55

Grant

MTR/2021/000370

Fund Ref

Mission on Nano Science and Technology

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