Performance Analysis of Gate Engineered III-Nitride/β-Ga2O3Nano-HEMT for High-Power Nanoelectronics
Document Type
Conference Proceeding
Publication Date
1-1-2023
Abstract
In this paper, a field-plated III-nitride nano-HEMT over the β-Ga2O3 substrate is designed with three different types of gate structures. The impact of different gate structures on transfer characteristics, drain characteristics, electric field distribution, and gate leakage characteristics of the proposed nano-HEMT are presented with profound analysis. The device with a double-head (DH) recessed gate length of 20n m exhibits better transfer characteristics, pinch-off characteristics and lower gate leakage current. It is believed that this piece of research will give an insightful thought on the improved III-nitride HEMT grown on the emerging β-Ga2O3 material as a substrate for high-power nanoelectronics applications.
Identifier
85167657170 (Scopus)
ISBN
[9781665451093]
Publication Title
Proceedings IEEE International Symposium on Circuits and Systems
External Full Text Location
https://doi.org/10.1109/ISCAS46773.2023.10181917
ISSN
02714310
Volume
2023-May
Grant
MTR/2021/000370
Fund Ref
Department of Science and Technology, Ministry of Science and Technology, India
Recommended Citation
Rao, G. Purnachandra; Lenka, Trupti Ranjan; and Nguyen, Hieu Pham Trung, "Performance Analysis of Gate Engineered III-Nitride/β-Ga2O3Nano-HEMT for High-Power Nanoelectronics" (2023). Faculty Publications. 2173.
https://digitalcommons.njit.edu/fac_pubs/2173
