Photoluminescence and Raman scattering in three-dimensional Si/Si 1-xGe x nanostructures

Document Type

Article

Publication Date

2-23-2004

Abstract

Raman and photoluminescence measurements in Si/Si 1-xGe x nanostructures grown by molecular-beam epitaxy under conditions close to Stranski-Krastanov growth mode, were presented. Raman spectra were collected at room temperature in a backscattering geometry using Ar + laser as the excitation source. It was found that, a Ge concentration of higher than 50% induced Ge segregation in the form of Ge-core/SiGe shell nanoclusters. The results indicate that better control over Ge segregation in three dimensional Si/SiGe nanostructures may result in optoelectronic devices compatible with CMOS technology.

Identifier

1642309091 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.1650873

ISSN

00036951

First Page

1293

Last Page

1295

Issue

8

Volume

84

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