Highly efficient sensitizing of erbium ion luminescence in size-controlled nanocrystalline Si/SiO 2 superlattice structures

Authors

V. Yu Timoshenko, Lomonosov Moscow State University
M. G. Lisachenko, Lomonosov Moscow State University
B. V. Kamenev, Lomonosov Moscow State University
O. A. Shalygina, Lomonosov Moscow State University
P. K. Kashkarov, Lomonosov Moscow State University
J. Heitmann, Max Planck Institute of Microstructure Physics
M. Schmidt, Max Planck Institute of Microstructure Physics
M. Zacharias, Max Planck Institute of Microstructure Physics

Document Type

Article

Publication Date

4-5-2004

Abstract

The photoluminescence (PL) of undoped and ER-doped size-controlled nanocrystalline Si/SiO 2 superlattice structures is discussed. It is found that the optical excitation of Si nanocrystals can be completely transferred to the Er ³⁺ ions in surrounding SiO 2, which results in a strong PL line at 1.5 μm. For higher photon energy of excitation and for smaller nanocrystal sizes, the PL yield of the Er-doped structure increases. A strong coupling between excitons confined in Si nanocrystals and neighboring Er ³⁺ ions in their upper excited states explained the highly efficient sensitizing of the Er-related PL.

Identifier

2342564969 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.1690465

ISSN

00036951

First Page

2512

Last Page

2514

Issue

14

Volume

84

Recommended Citation

Timoshenko, V. Yu; Lisachenko, M. G.; Kamenev, B. V.; Shalygina, O. A.; Kashkarov, P. K.; Heitmann, J.; Schmidt, M.; and Zacharias, M., "Highly efficient sensitizing of erbium ion luminescence in size-controlled nanocrystalline Si/SiO 2 superlattice structures" (2004). Faculty Publications. 20391.
https://digitalcommons.njit.edu/fac_pubs/20391