Comparative study of photoluminescence of undoped and erbium-doped size-controlled nanocrystalline Si/SiO 2 multilayered structures
Document Type
Article
Publication Date
8-15-2004
Abstract
Spectra and the transients of the photoluminescence (PL) of undoped and Er-doped size-controlled nanocrystalline Si/SiO 2 multilayered structures with mean nanocrystal size were investigated. The PL spectra of the Er-doped structures show several dips separated by the energy of Si TO-phonon, at low temperature. The structures are also bound to the transition energies between the second and third excited states to the ground state of Er 3+. This efficient sensitizing of the Er-related luminescence is explained by the structural properties.
Identifier
4344662693 (Scopus)
Publication Title
Journal of Applied Physics
External Full Text Location
https://doi.org/10.1063/1.1773383
ISSN
00218979
First Page
2254
Last Page
2260
Issue
4
Volume
96
Grant
03-51-6486
Fund Ref
Citrus Research and Development Foundation
Recommended Citation
Timoshenko, V. Yu; Lisachenko, M. G.; Shalygina, O. A.; Kamenev, B. V.; Zhigunov, D. M.; Teterukov, S. A.; Kashkarov, P. K.; Heitmann, J.; Schmidt, M.; and Zacharias, M., "Comparative study of photoluminescence of undoped and erbium-doped size-controlled nanocrystalline Si/SiO 2 multilayered structures" (2004). Faculty Publications. 20270.
https://digitalcommons.njit.edu/fac_pubs/20270
