Screening of Si-H bonds during plasma processing

Document Type

Conference Proceeding

Publication Date

10-1-2004

Abstract

This work investigates the screening of Si-H bonds at the Si-SiO 2 interface in an n-channel MOSFET due to plasma charging damage. Since CMOS devices are subjected to high field electron injection during plasma processing, this condition was emulated by subjecting the devices to current stress (both gate injection and substrate injection). With the source and drain terminals reverse biased by a screening potential during stress, representing the impact from source and drain antenna, a decrease in stress-induced interface state density formation was noticed. Observed interface state density D it before and after the high field injection, therefore, demonstrates an effective screening of the source and the drain edges. During gate injection the Si-H bond concentration, estimated using a model based on a simple first order kinetic equation, is inversely proportional to measured Dit at effective screening potentials. In substrate injection, however, the Si-H concentration does not relate to Dit creation. Similar trends were observed for transistors with different antenna ratios. Subsequent hot carrier stress confirms that the screening is mainly due to protected drain edges. These results suggest that effective screening of Si-H bonds is possible during plasma processing. © 2004 Elsevier Ltd. All rights reserved.

Identifier

3142784549 (Scopus)

Publication Title

Solid State Electronics

External Full Text Location

https://doi.org/10.1016/j.sse.2004.05.017

ISSN

00381101

First Page

1809

Last Page

1814

Issue

10-11 SPEC. ISS.

Volume

48

Fund Ref

National Science Foundation

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