Hydrogen/deuterium implantation for Si-dielectric interface in nanoscale devices

Authors

T. Kundu, Newark College of Engineering
D. Misra, Newark College of Engineering

Document Type

Conference Proceeding

Publication Date

12-1-2004

Abstract

This work investigates the impact of hydrogen/deuterium implantation at the Si/SiO 2 interface when a thin oxide is grown on implanted silicon substrate. Implantation energy and implantation dose significantly influence the interface passivation. Observed interface states at the Si/SiO 2 interface suggests an isotope effect where deuterium implanted devices yielded better interface results compared to that of hydrogen implanted devices. Deuterium implanted at 20keV with a dose of Ix 10 ¹⁴ atoms/cm ² seems to be effectively passivating the interface. Transient enhanced diffusion of implanted hydrogen and deuterium is affected by the implantation damage.

Identifier

17044401375 (Scopus)

Publication Title

Proceedings Electrochemical Society

First Page

346

Last Page

355

Volume

4

Recommended Citation

Kundu, T. and Misra, D., "Hydrogen/deuterium implantation for Si-dielectric interface in nanoscale devices" (2004). Faculty Publications. 20054.
https://digitalcommons.njit.edu/fac_pubs/20054