Investigation of Defect States of HfO2 and SiO2 on p type Silicon using THz Spectroscopy
Document Type
Conference Proceeding
Publication Date
1-1-2005
Abstract
As a non contact characterization tool, visible pump - THz probe spectroscopy provides distinct spectra for high κ gate dielectrics. The interfacial defect density is found to be larger for HfO2 than for SiO2. © 2005 Optical Society of America.
Identifier
85088723205 (Scopus)
ISBN
[1557527970, 9781557527974]
Publication Title
Optics Infobase Conference Papers
External Full Text Location
https://doi.org/10.1364/fio.2005.fwf1
e-ISSN
21622701
Recommended Citation
Sengupta, Amartya; Altan, Hakan; Bandyopadhyay, Aparajita; Federici, John F.; Grebel, H.; and Pham, Daniel, "Investigation of Defect States of HfO2 and SiO2 on p type Silicon using THz Spectroscopy" (2005). Faculty Publications. 19958.
https://digitalcommons.njit.edu/fac_pubs/19958
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