Silicon nanoelectronics and beyond: An overview and recent developments

Document Type

Article

Publication Date

1-1-2005

Abstract

This year marks the 40th anniversary of the invention of the first beam-lead device by Lepselter et al. Lepselter and coworkers proposed a method of fabricating a new semiconductor device structure and its application to high-frequency silicon switching transistors and ultra-high-speed integrated circuits. Beam-lead technology, also known as air-bridge technology, has established itself for its unsurpassed reliability in high-frequency silicon switching transistors and ultra-high-speed integrated circuits for telecommunications and missile systems. The beam-lead device became the first example of a commercial microelectromechanical structure (MEMS). Since its inception, MEMS has taken advantage of the evolving silicon technology, resulting in today's nanoelectromechanical structure and nanooptomechanical structure. In this paper, an overview of recent developments of silicon nanoelectronics is presented.

Identifier

22944479626 (Scopus)

Publication Title

JOM

External Full Text Location

https://doi.org/10.1007/s11837-005-0130-1

ISSN

10474838

First Page

16

Last Page

20

Issue

6

Volume

57

This document is currently not available here.

Share

COinS