Ion beam mixing of silicon-germanium thin films

Document Type

Conference Proceeding

Publication Date

1-1-2005

Abstract

An overview of processing silicon-germanium (Si-Ge) alloys for various applications is presented here. Several methods of formation are briefly summarized. In particular, results of preliminary experiments on ion-beam mixing of Si-Ge layered structures deposited by physical vapor deposition and subsequently ion implanted with varying doses of argon are presented. Different layered structures have been designed and mixed to obtain optimal process conditions. The ion beam mixing process yields films with a gradual band-gap variation from 1.12 eV to 0.85 eV, thus allowing quite a wider spectrum of wavelengths to be absorbed. Rutherford backscattering spectrometry (RBS) has been used to characterize the nature and extent of the mixing of as-deposited and irradiated films.

Identifier

20344393616 (Scopus)

Publication Title

Journal of Electronic Materials

External Full Text Location

https://doi.org/10.1007/s11664-005-0053-1

ISSN

03615235

First Page

468

Last Page

473

Issue

5

Volume

34

This document is currently not available here.

Share

COinS