Si-SiO2 interface passivation using hydrogen and deuterium implantation

Document Type

Article

Publication Date

2-21-2005

Abstract

Hydrogen/deuterium was implanted in 〈100〉 silicon to passivate dangling bonds at the Si/SiO2 interface when a thin oxide is grown on implanted silicon substrate. It was observed that implantation energy and dose influence the interface passivation. Measured interface states at the Si/SiO2 interface suggest an isotope effect where deuterium implanted devices yielded better interface passivation compared to that of hydrogen implanted devices. Diffusion of implanted hydrogen and deuterium to the interface is affected by the implantation damage. © 2004 The Electrochemical Society. All rights reserved.

Identifier

13444283432 (Scopus)

Publication Title

Electrochemical and Solid State Letters

External Full Text Location

https://doi.org/10.1149/1.1843752

ISSN

10990062

First Page

G35

Last Page

G37

Issue

2

Volume

8

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