High-k gate dielectrics

Document Type

Article

Publication Date

6-1-2005

Abstract

The requirements, current status of fabrication/processing, electrical properties and reliability issues of high-k-dielectrics are studied. The underlying physics for these undesirable properties is governed primarily by the ionic nature of the transition metal (TM) oxide. TM-based high-k dielectrics materials are typically deposited on crystalline silicon rather than thermally grown. The electrical properties and reliability must be investigated further before high-k materials become an integral part of nanoscale CMOS devices.

Identifier

23244462592 (Scopus)

Publication Title

Electrochemical Society Interface

ISSN

10648208

First Page

30

Last Page

34

Issue

2

Volume

14

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