Impact of high-k gate stack material with metal gates on LF noise in n- and p-MOSFETs

Document Type

Conference Proceeding

Publication Date

6-17-2005

Abstract

The aim of this paper is to study the 1/f noise performance of n- and p-channel MOSFETs with different Hf-based gate stacks, deposited by MOCVD and using metal (PVD TaN) as a gate material. The drain current dependence is different for n- and p- channel devices over the noise spectra, showing different noise origin mechanisms - mobility fluctuations for pMOS and number fluctuations for nMOS. Asymmetric trap density distributions with energy between n- and pMOS have been observed which is a possible reason for the observed lower noise magnitude in pMOS devices. A fair comparison using Hooge's parameter and trap densities as figures of merit shows weak correlation on the Hf-composition, allowing a large window for gate stack processing of devices. © 2005 Elsevier B.V. All rights reserved.

Identifier

19944381220 (Scopus)

Publication Title

Microelectronic Engineering

External Full Text Location

https://doi.org/10.1016/j.mee.2005.04.029

ISSN

01679317

First Page

226

Last Page

229

Issue

SUPPL.

Volume

80

Grant

– 0140584

Fund Ref

National Science Foundation

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