Carrier transport in one-dimensional Ge Nanowires/Si substrate heterojunctions

Document Type

Conference Proceeding

Publication Date

8-25-2005

Abstract

Samples of Ge Nanowires (Ge NWs) grown by chemical vapor deposition (CVD) on single crystal, (100) and (111) oriented Si substrates were studied with respect to their electrical properties. Using different contact geometries, direct current (DC) and alternating current (AC) electrical and photoelectrical measurements were carried out at room temperature. A rectifying junction behavior was observed indicating a low defect density at NWs/substrate heterointerface. AC conductance exhibits significant frequency dependence with a power law behavior, suggesting that carrier transport in Ge NW volume is associated with hopping processes. © 2005 Materials Research Society.

Identifier

23844493410 (Scopus)

Publication Title

Materials Research Society Symposium Proceedings

ISSN

02729172

First Page

335

Last Page

340

Volume

832

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