Optical properties of Ge nanowires grown on silicon (100) and (111) substrates
Document Type
Conference Proceeding
Publication Date
8-25-2005
Abstract
In this paper, we report Raman Scattering (RS) and photoluminescence (PL) measurements of Ge nanowires (NWs) grown via vapor-liquid-solid (VLS) using chemical vapor deposition silicon substrates consisting of (100) and (111) crystallographic orientations. Ge NWs grown are ∼40 nm in diameter, approximately a micrometer in length, and a sharp narrow Raman peak at ∼300 cm -1 indicates single crystal quality. An absence of SiGe peak in the Raman spectra indicates that SiGe interdiffusion is insignificant for the NW volume. Low temperature PL-intensity-dependence spectra indicate that the observed emission originates at the Ge NW - Si substrate interface, where SiGe intermixing has been detected. This interface is formed differently for (111) and (100) oriented Si substrates due to the 〈111〉 preferential growth direction of Ge NWs. © 2005 Materials Research Society.
Identifier
23844460210 (Scopus)
Publication Title
Materials Research Society Symposium Proceedings
ISSN
02729172
First Page
329
Last Page
334
Volume
832
Recommended Citation
Sharma, V.; Kamenev, B. V.; Tsybeskov, L.; and Kamins, T. I., "Optical properties of Ge nanowires grown on silicon (100) and (111) substrates" (2005). Faculty Publications. 19595.
https://digitalcommons.njit.edu/fac_pubs/19595
