Structural modifications of nc-Si/SiO2 super-lattices by localized photo-induced heating

Authors

B. V. Kamenev, Newark College of Engineering
H. Grebel, Newark College of Engineering
L. Tsybeskov, Newark College of Engineering
V. Yu Timoshenko, Lomonosov Moscow State University

Document Type

Conference Proceeding

Publication Date

8-25-2005

Abstract

Structural modifications in nanocrystalline silicon-silicon dioxide (nc-Si/SiO:) superlattices (SL) under high intensity laser irradiation have been studied experimentally and theoretically. The melting threshold in nc-Si/SiO2 SLs was found in the range of 5-8 kW/cm² for cw excitation by 514 nm line of Ar⁺ laser and ∼11-15 mJ/cm ² for pulsed irradiation by 248 nm, τ∼20 ns KrF laser. The irradiation of the samples above the melting threshold induces the irreversible modification of nc-Si layers, which is controlled by the thickness of the separating SiO2 layers, and increases the PL intensity increases by more than 300%. © 2005 Materials Research Society.

Identifier

23844473609 (Scopus)

Publication Title

Materials Research Society Symposium Proceedings

ISSN

02729172

First Page

219

Last Page

224

Volume

832

Recommended Citation

Kamenev, B. V.; Grebel, H.; Tsybeskov, L.; and Timoshenko, V. Yu, "Structural modifications of nc-Si/SiO2 super-lattices by localized photo-induced heating" (2005). Faculty Publications. 19594.
https://digitalcommons.njit.edu/fac_pubs/19594