Optical properties of Ge nanowires grown on Si(100) and (111) substrates: Nanowire-substrate heterointerfaces

Document Type

Article

Publication Date

11-1-2005

Abstract

We report photoluminescence (PL) and Raman scattering (RS) measurements of (111) oriented Ge nanowires (NWs) grown by chemical vapor deposition on (100) and (111) silicon substrates. Our PL measurements strongly suggest that the observed emission originates at low-defect density Ge NW - Si substrate interfaces. Both, PL and RS data indicate that Si - Ge intermixing and strain are more pronounced for the Ge NW - (111) Si interface, while NWs grown on (100) Si substrates are relaxed. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA.

Identifier

28644437965 (Scopus)

Publication Title

Physica Status Solidi A Applications and Materials Science

External Full Text Location

https://doi.org/10.1002/pssa.200521024

e-ISSN

18626319

ISSN

18626300

First Page

2753

Last Page

2758

Issue

14

Volume

202

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