Mixed-signal and noise properties of nMOSFETs with HfSiON/TaN gate stacks

Document Type

Conference Proceeding

Publication Date

12-1-2005

Abstract

Digital- and analog properties of nMOSFETs with HfSiON/TaN gate stacks are discussed. Ion/Ioff, analog gain Av, and 1/f noise as function of the Hf-content in the gate dielectric were determined. It is observed that digital specs can be met if correct metal workfunctions are used. It is further found that 1/f noise is independent of the Hfcontent in the gate stack. This result suggests that the dielectric/metal gate interface should receive major attention for reducing 1/f noise in nMOSFETs with high-k/metal gate stacks. This is in particular true in view of the observed low A v values and the knowledge that pocket engineering - not applied in this experiment - will further degrade both noise and analog gain. © 2005 IEEE.

Identifier

33751436849 (Scopus)

ISBN

[0780392035, 9780780392038]

Publication Title

Proceedings of Essderc 2005 35th European Solid State Device Research Conference

External Full Text Location

https://doi.org/10.1109/ESSDER.2005.1546596

First Page

105

Last Page

108

Volume

2005

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