Charge trapping in metal gate/high-k n-mosfets during substrate injection

Document Type

Conference Proceeding

Publication Date

12-1-2005

Abstract

Charge trapping characteristics of MOCVD HfSi xO y (20% SiO 2) gate stack of n-MOSFETs during substrate injection have been investigated. Positive constant voltage stress (CVS) and constant current stress (CCS) were applied at the gate of TJN/HfSi xO y/SiO 2/p-Si n-MOSFETs having EOT of 2nm. Significant electron trapping is observed from the positive shift of threshold voltage (ΔV t) after stress. Curve fitting of the threshold voltage shift data confirms power law dependence for Hf-silicate gate stacks. Electron trapping at bulk high-k oxide and interface trap generation were observed from charge pumping measurement for both cases. A turn-around effect is noticed for ΔV t as the stress current and voltage increases under CCS and CVS. Dependence of spatial distribution of charge trapping at shallow traps on stress level in the high-k film, and redistribution of trapped charges during and after removal of stress are possibly responsible for the turn-around effect.

Identifier

31844441131 (Scopus)

Publication Title

Proceedings Electrochemical Society

First Page

366

Last Page

375

Volume

PV 2005-05

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