Low-frequency (1f) noise performance of n- and p-MOSFETs with poly-SiHf-based gate dielectrics

Document Type

Article

Publication Date

1-1-2006

Abstract

The low-frequency (LF) noise performance of n- and p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with different Hf-based gate oxides, deposited by metallorganic chemical vapor deposition (MOCVD) on the same interfacial oxide layer and using polysilicon (poly-Si) as a gate material has been investigated. Independent of the gate oxide, the LF noise spectra of n- and p-MOSFETs are predominantly of the 1 f γ type, with the frequency exponent γ close to 1. For nMOSFETs, the noise spectral density of HfO2 devices is two orders of magnitude higher than for SiON or Hfx Si1-x ON (silicates), where 0

Identifier

33644809887 (Scopus)

Publication Title

Journal of the Electrochemical Society

External Full Text Location

https://doi.org/10.1149/1.2170549

ISSN

00134651

First Page

G324

Last Page

G329

Issue

4

Volume

153

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