Effect of surface nitridation on the Ge/HfO2 interface

Document Type

Conference Proceeding

Publication Date

1-1-2006

Abstract

Effect of Ge surface nitridation, prior to HfO2 deposition, on Ge/HfO2 interface has been studied using low temperature measurements. C-V characteristics at room temperature show significant dispersion in nitrided devices compared to non-nitrided devices as a function of frequency. Electron trapping is found to be dominant as temperature was reduced to 140K. Estimated activation energies in nitrided and non-nitrided devices indicate that surface nitridation is introducing new trap levels in bulk oxide. Constant voltage stress shows hole trapping being dominant in non-nitrided devices. In nitrided devices, effect of both hole and electron trapping is observed at higher stress level and higher charge injection. copyright The Electrochemical Society.

Identifier

33845256003 (Scopus)

ISBN

[1566774446]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/1.2209251

e-ISSN

19386737

ISSN

19385862

First Page

17

Last Page

26

Issue

5

Volume

1

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