Annealing effect on reliabilty of SiO2 for deuterium implanted silicon

Document Type

Conference Proceeding

Publication Date

1-1-2006

Abstract

Deuterium implantation in silicon substrate before the growth of gate oxide leads to enhanced interface passivation. This work studies the reliability of the gate oxide when the wafers were subjected to further annealing conditions at 600°C and 700°C after the oxide growth. Annealing behavior suggests that the interface and oxide reliability degrades for lower dose of implantation, 1×1014/cm2 whereas superior interface and oxide reliability was obtained for higher dose of implantation at 1×1015/cm2. Possible out diffusion of deuterium ions during annealing governed the interface and oxide degradation for lower dose. In case of higher dose, on the other hand, the improvement is attributed due to the interaction of deuterium with damage and passivation of intrinsic defects and dangling bonds in the transition SiOx layer.

Identifier

32844473166 (Scopus)

ISBN

[9781607685395]

Publication Title

Ecs Transactions

e-ISSN

19386737

ISSN

19385862

First Page

221

Last Page

231

Issue

1

Volume

1

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