Strain relaxation and surface migration effects in InGaAlAs and InGaAsP selective-area-grown ridge waveguides
Document Type
Article
Publication Date
3-3-2006
Abstract
Surface migration of the group-III precursors and strain relaxation at the ridge sidewalls are compared for 2.5 μm wide waveguides based on InGaAsP and InGaAlAs multiple-quantum-well (MQW) structures. The cross-sectional thickness and strain variations have been measured using synchrotron radiation-based x-ray diffraction with an angular resolution of 2 arc s and a beam size of (0.24×0.35) μ m2. Indium-rich overgrowth has been observed for the InGaAsP-based waveguides, while InGaAlAs-based waveguides demonstrate thickness uniformity of the MQW active region with a strain relief of 0.4%μm at the sidewalls. © 2006 American Institute of Physics.
Identifier
33644518696 (Scopus)
Publication Title
Applied Physics Letters
External Full Text Location
https://doi.org/10.1063/1.2177634
ISSN
00036951
Issue
8
Volume
88
Grant
DMR-0225180
Fund Ref
National Science Foundation
Recommended Citation
Sirenko, A. A.; Kazimirov, A.; Ougazzaden, A.; O'Malley, S. M.; Bilderback, D. H.; Cai, Z. H.; Lai, B.; Huang, R.; Gupta, V. K.; Chien, M.; and Chu, S. N.G., "Strain relaxation and surface migration effects in InGaAlAs and InGaAsP selective-area-grown ridge waveguides" (2006). Faculty Publications. 19032.
https://digitalcommons.njit.edu/fac_pubs/19032
