Laser-induced structural modifications in nanocrystalline silicon/amorphous silicon dioxide superlattices

Document Type

Article

Publication Date

4-3-2006

Abstract

We calculate and experimentally detect the laser melting threshold in nanocrystalline Si/amorphous Si O2 superlattices. Using laser energy density slightly above the melting threshold, we observe two types of laser-induced structural modifications: (i) disappearance of nanocrystalline Si phase in the samples with thin (∼2 nm) Si O2 layers and (ii) amorphization of Si nanocrystals in the samples with thicker (≥5 nm) Si O2 layers. The observed Si nanocrystal amorphization increases optical absorption and intensity of visible photoluminescence in nanocrystalline Si/amorphous Si O2 superlattices. © 2006 American Institute of Physics.

Identifier

33645668291 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.2193040

ISSN

00036951

Issue

14

Volume

88

Fund Ref

National Science Foundation

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