Synchrotron high angular resolution microdiffraction analysis of selective area grown optoelectronic waveguide arrays
Document Type
Article
Publication Date
4-7-2006
Abstract
A synchrotron microbeam high-angular resolution diffraction setup based on a phase zone plate and a perfect Si(004) analyzer crystal was introduced to generate an x-ray microbeam with a lateral size of 0.24 νm and an angular resolution of 2 arcsec. The microbeam high angular resolution x-ray diffraction was applied to study InGaAlAs-based multiple quantum well (MQW) ridge-waveguide arrays produced by metal-organic vapour-phase epitaxy in a selective area growth regime with a central waveguide width varying from 1.6 to 60 νm. The analysis of the period T and the strain S in MQW ridge structures determined from the high-resolution diffraction data is presented. It was found that the MQW period is uniform across the ridge within the error bar of ΔT = 0.25 nm. Within the waveguide array, the MQW period and strain can be adequately described by a gas-phase diffusion model. © 2006 IOP Publishing Ltd.
Identifier
33645067648 (Scopus)
Publication Title
Journal of Physics D Applied Physics
External Full Text Location
https://doi.org/10.1088/0022-3727/39/7/013
e-ISSN
13616463
ISSN
00223727
First Page
1422
Last Page
1426
Issue
7
Volume
39
Recommended Citation
Kazimirov, A.; Sirenko, A. A.; Bilderback, D. H.; Cai, Z. H.; Lai, B.; Huang, R.; and Ougazzaden, A., "Synchrotron high angular resolution microdiffraction analysis of selective area grown optoelectronic waveguide arrays" (2006). Faculty Publications. 19000.
https://digitalcommons.njit.edu/fac_pubs/19000
