Synchrotron high angular resolution microdiffraction analysis of selective area grown optoelectronic waveguide arrays

Document Type

Article

Publication Date

4-7-2006

Abstract

A synchrotron microbeam high-angular resolution diffraction setup based on a phase zone plate and a perfect Si(004) analyzer crystal was introduced to generate an x-ray microbeam with a lateral size of 0.24 νm and an angular resolution of 2 arcsec. The microbeam high angular resolution x-ray diffraction was applied to study InGaAlAs-based multiple quantum well (MQW) ridge-waveguide arrays produced by metal-organic vapour-phase epitaxy in a selective area growth regime with a central waveguide width varying from 1.6 to 60 νm. The analysis of the period T and the strain S in MQW ridge structures determined from the high-resolution diffraction data is presented. It was found that the MQW period is uniform across the ridge within the error bar of ΔT = 0.25 nm. Within the waveguide array, the MQW period and strain can be adequately described by a gas-phase diffusion model. © 2006 IOP Publishing Ltd.

Identifier

33645067648 (Scopus)

Publication Title

Journal of Physics D Applied Physics

External Full Text Location

https://doi.org/10.1088/0022-3727/39/7/013

e-ISSN

13616463

ISSN

00223727

First Page

1422

Last Page

1426

Issue

7

Volume

39

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