Ion beam mixing for processing of nanostructure materials

Document Type

Conference Proceeding

Publication Date

5-1-2006

Abstract

Ion beam mixing (IBM) has been used to process various nanostructure materials and thin films for applications in microelectronics and optoelectronics. In this paper, a study of alloy formation of Si-Ge, processed at shallow depths followed by oxygen implantation, is presented. The mixture is annealed to form Si-GeO 2-Si, wherein the germanium oxide may form alone or as a matrix with the source of excitation. Characterization techniques used in this study include investigations of the structural variations due to argon ion-beam irradiation by Rutherford backscattering (RBS) and shallow defects and deep trapping level states by thermoluminescence (TL) measurements. Fourier transform infrared (FTIR) spectroscopy is used to analyze the thin film/islands of GeO 2 formed in the matrix.

Identifier

33745015585 (Scopus)

Publication Title

Journal of Electronic Materials

External Full Text Location

https://doi.org/10.1007/BF02692536

ISSN

03615235

First Page

834

Last Page

839

Issue

5

Volume

35

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