Enhanced SiO 2 reliability on deuterium-implanted silicon

Document Type

Conference Proceeding

Publication Date

6-1-2006

Abstract

Stress-induced leakage current and time-dependent dielectric breakdown were investigated to examine the reliability of gate oxides grown on hydrogen- and deuterium-implanted silicon substrates. An order of magnitude improvement in charge-to-breakdown was observed for the deuterium-implanted devices as compared with the hydrogen-implanted ones. Such reliability improvement may be explained by the reduction of defects in the SiO 2 and Si/SiO 2 interface, such as Si dangling bonds, weak Si-Si bonds, and strained Si-O bonds due to the retention of implanted deuterium at the interface and in the bulk oxide as confirmed by secondary ion mass spectroscopy. © 2006 IEEE.

Identifier

33748095161 (Scopus)

Publication Title

IEEE Transactions on Device and Materials Reliability

External Full Text Location

https://doi.org/10.1109/TDMR.2006.876586

e-ISSN

15304388

ISSN

15304388

First Page

288

Last Page

291

Issue

2

Volume

6

Grant

ECS-0140584

Fund Ref

National Science Foundation

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